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1. Field of the Invention
The present invention relates to a method for manufacturing a functional device by using a semiconductor substrate in which a film including an active semiconductor layer is formed.
2. Description of the Related Art
In recent years, a functional device using a semiconductor substrate in which an active semiconductor layer is formed over an insulating substrate is manufactured. As the functional device, there is a device having the characteristics of a transistor, such as a thin film transistor (TFT) and a three-terminal element such as a diode. It has been noted that not only as an individual functional device but also as a device integrated on a substrate, such as a display device, an image sensor, and a memory device, the above-mentioned functional device can be applied to a semiconductor integrated circuit.
In order to manufacture the functional device, a semiconductor substrate in which a semiconductor layer is formed over a substrate including a film containing an insulating material such as a glass substrate or a quartz substrate is generally used. It is noted that the semiconductor layer has at least a channel forming region which is an active semiconductor layer in a case where the device is a transistor and a three-terminal element such as a diode. The channel forming region is, for example, a channel formation region of a thin film transistor.
The semiconductor layer is generally formed by using a semiconductor film formed by using a semiconductor material such as amorphous silicon or polycrystalline silicon. A laser light irradiation technique is generally used for forming a semiconductor film. By using the technique, a silicon film can be formed at a low temperature as compared with a formation temperature of a silicon film in a furnace anneal. Thus, the technique has been drawing attention as a technique for forming a silicon film that can be used for a semiconductor layer of a display device and the like in which heat resistance is required.
However, it has been known that when the above-mentioned technique is used for forming 01e38acffe
Oct 19, 2010
Official Movie Slideshow, Commercial, and Demo by Solidworks 2010:
Oct 16, 2010
Official Windows 10 20% discount offer:
Oct 16, 2010
Official Windows 7 20% discount offer:
Oct 10, 2010
Solidworks 2010 is now officially available. Download link:
Oct 10, 2010
Official Movie Slideshow, Commercial, and Demo by Solidworks 2010:
Sep 27, 2010
As mentioned previously, we will provide a Windows 7 + SP1 discount.
Sep 26, 2010
Solidworks 2010 is now available in:
10% off for WINDOWS 7:
10% off for WINDOWS 8:
10% off for WINDOWS 8.1
30% off for WINDOWS XP:
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10% off for SOLIDWORKS 2009:
Sep 19,
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